9 1 " # 1 3 1 p x f s . 0 4 ' & 5 u p-channel power mos fet dmos structure low on-state resistance: 0.25 ? max ultra high-speed switching sot-89 package applications notebook pcs cellular and portable phones on-board power supplies li-ion battery systems general description the XP162A01B5PR is a p-channel power mos fet with low on-state resistance and ultra high-speed switching characteristics. because high-speed switching is possible, the ic can be efficiently set thereby saving energy. the small sot-89 package makes high density mounting possible. features low on-state resistance: rds(on)=0.25 ? (vgs=-4.5v) rds(on)=0.4 ? (vgs=-2.5v) ultra high-speed switching operational voltage: -2.5v high density mounting: sot-89 absolute maximum ratings equivalent circuit pin configuration parameter drain-source voltage gate-source voltage drain current (dc) drain current (pulse) reverse drain current continuous channel power dissipation (note) channel temperature storage temperature vdss vgss id idp idr pd tch tstg -20 12 -2 -6 -2 2 150 -55~150 v v a a a w : : symbol ratings units pin assignment pin number pin name function 1 3 2 g s d gate source drain ta=25 : when implemented on a glass epoxy pcb note: 1 3 2 p-channel mos fet (1 device built-in) 1 g 3 s 2 d sot-89 (top view)
u dc characteristics ta=25 : electrical characteristics parameter units gate-source cut-off voltage vgs(off) -0.5 v 0.4 0.3 id=-1a, vgs=-2.5v ? gate-source leakage current igss a 10 forward transfer admittance (note) 2.5 s body drain diode forward voltage -0.85 -1.1 v drain cut-off current idss -10 a vf vds=-20v, vgs=0v id=-1ma, vds=-10v id=-1a, vds=-10v if=-2a, vgs=0v vgs= 12v, vds=0v drain-source on-state resistance (note) rds(on) ? id=-1a, vgs=-4.5v 0.19 0.25 symbol conditions max min typ parameter units feedback capacitance crss pf output capacitance coss pf input capacitance ciss 65 180 320pf vds=-10v, vgs=0v f=1mhz symbol conditions max min typ dynamic characteristics ta=25 : effective during pulse test. note: yfs parameter units fall time tf ns rise time tr ns turn-on delay time td (on) 50 turn-off delay time td (off) ns 40 15 10ns vgs=-5v, id=-1a vdd=-10v symbol conditions max min typ switching characteristics ta=25 : parameter units rth (ch-a) thermal resistance (channel-surroundings) 62.5 : /w implement on a glass epoxy resin pcb symbol conditions max min typ thermal characteristics
9 1 " # 1 3 1 p x f s . 0 4 ' & 5 u drain/source on-state resistance :rds (on) ( ? ) ambient temperature:topr ( : ) drain/source on-state resistance vs. ambient temp. pulse test * e1 " " "
" 7 7 h t1 7 gate/source cut off voltage variance :vgs (off) variance (v) ambient temperature:topr ( : ) gate/source cut off voltage variance vs. ambient temp. vds=-10v, id=-1ma & m f d u s j d b m $ i b s b d u f s j t u j d t drain current:id (a) drain/source voltage:vds (v) drain current vs. drain /source voltage pulse test, ta=25 : 7 7 7 h t1 7 7 7 7 7 7 drain current:id (a) gate/source voltage:vgs (v) drain current vs. gate/source voltage pulse test, vds=-10v ? 5 p q s1 ? ? drain /source on-state resistance :rds (on) ( ? ) gate/source voltage:vgs (v) drain/source on-state resistance vs. gate/source voltage pulse test, ta=25 : * e1 " " drain/source on-state resistance :rds (on) ( ? ) drain current:id (a) drain/source on-state resistance vs. drain current pulse test, ta=25 : 7 7 h t1 7
u & m f d u s j d b m $ i b s b d u f s j t u j d t capacitance:ciss, coss, crss (pf) drain/source voltage:vds (v) drain/source voltage vs. capacitance vgs=0v, f=1mhz $ j t t $ p t t $ s t t switching time:t (ns) drain current:id (a) switching time vs. drain current vgs=-5v, vdd -10v, pw=10 sec. duty ? 1% u g u e p g g u e p o u s gate/source voltage:vgs (v) gate charge:qg (nc) gate/source voltage vs. gate charge vds=-10v, id=-2a reverse drain current:id (a) source/drain voltage:vsd (v) reverse drain current vs. source/drain voltage pulse test
7 7 7 h t1 7 pulse width:pw (sec) standardized transition thermal resistance vs. pulse width rth (ch-a)=62.5?c/w, (implemented on a glass epoxy pcb) single pulse 4 u b o e b s e j [ f e 5 s b o t j u j p o 5 i f s n b m 3 f t j t u b o d f
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